Organic light-emitting display apparatus

ABSTRACT

An organic light-emitting display apparatus including a substrate having a display area and a peripheral area; a TFT in the display area; an organic insulating layer on the TFT; an OLED that includes a pixel electrode electrically connected to the TFT, an emission layer on the pixel electrode, and a counter electrode facing the pixel electrode with the emission layer therebetween; a pixel-defining layer on the organic insulating layer and having an opening overlying the pixel electrode; a first dam in the peripheral area; a second dam in the peripheral area to surround an outer periphery of the first darn; a metal-containing layer covering the first dam and including a same material as the pixel electrode; and a thin-film encapsulator on the substrate to cover the OLED and including a first and second inorganic films, and an organic film between the first and second inorganic films.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2018-0076109, filed on Jun. 29, 2018,in the Korean Intellectual Property Office, and entitled: “OrganicLight-Emitting Display Apparatus,” is incorporated by reference hereinin its entirety.

BACKGROUND 1. Field

Embodiments relate to an organic light-emitting display apparatus.

2. Description of the Related Art

Among display apparatuses, organic light-emitting display apparatuseshave attracted attention as next-generation display apparatuses becauseof their advantages of wide viewing angles, excellent contrast ratios,and fast response times.

In general, an organic light-emitting display apparatus may include athin-film transistor (TFT) and organic light-emitting diodes (OLEDs)formed on a substrate, and the OLEDs are self-emissive. Such organiclight-emitting display apparatuses are used not only as displays forsmall products such as mobile phones but also as displays for largeproducts such as televisions.

SUMMARY

The embodiments may be realized by providing an organic light-emittingdisplay apparatus including a substrate that includes a display area anda peripheral area around the display area; a thin-film transistor (TFT)in the display area of the substrate; an organic insulating layer on theTFT and covering the TFT; an organic light-emitting diode (OLED) thatincludes a pixel electrode electrically connected to the TFT, anemission layer located on the pixel electrode, and a counter electrodefacing the pixel electrode with the emission layer therebetween; apixel-defining layer on the organic insulating layer, the pixel-defininglayer having an opening overlying a central portion of the pixelelectrode; a first dam in the peripheral area of the substrate; a seconddam in the peripheral area of the substrate to surround an outerperiphery of the first dam; a metal-containing layer covering the firstdam, the metal-containing layer including a same material as a materialof the pixel electrode; and a thin-film encapsulator over the entiresubstrate to cover the OLED, the thin-film encapsulator including afirst inorganic film, a second inorganic film, and an organic filmbetween the first inorganic film and the second inorganic film.

The metal-containing layer may directly contact a top surface, an innersurface, and an outer surface of the first dam.

A first end portion of the metal-containing layer may cover a terminalend of the organic insulating layer.

A second end portion of the metal-containing layer may extend to thesecond dam.

The first inorganic film and the second inorganic film of the thin-filmencapsulator may extend to an edge of the substrate and cover the seconddam.

The organic light-emitting display apparatus may further include a lightenhancement layer between the counter electrode and the first inorganicfilm, the light enhancement layer including an inorganic material.

The light enhancement layer may extend onto the first dam and may coverthe first dam.

The light enhancement layer may be directly between the metal-containinglayer and the first inorganic film.

The organic light-emitting display apparatus may further include a powersupply line between the organic insulating layer and the first dam,wherein an end of the power supply line is covered by the organicinsulating layer.

The metal-containing layer may be between the organic insulating layerand the first dam and may electrically contact the power supply line.

The organic light-emitting display apparatus may further include a firstcompensation layer under the first dam, the first compensation layerincluding a metal.

The TFT may include a semiconductor layer, a gate electrode at leastpartially overlapping the semiconductor layer, and a source electrodeand a drain electrode electrically connected to the semiconductor layer,and the first compensation layer may include a same material as amaterial of the source electrode and the drain electrode.

The organic light-emitting display apparatus may further include asecond compensation layer under the first compensation layer, the secondcompensation layer including a same material as a material of the gateelectrode.

The organic light-emitting display apparatus may further include a thirdcompensation layer under the first compensation layer, the thirdcompensation layer including an organic material.

The first dam may include a same material as a material of the organicinsulating layer.

The second dam may include a first layer including a same material as amaterial of the organic insulating layer, and a second layer including asame material as a material of the pixel-defining layer.

The embodiments may be realized by providing an organic light-emittingdisplay apparatus including a substrate that includes a display area anda peripheral area around the display area; a display in the display areaof the substrate, the display including a thin-film transistor (TFT), anorganic insulating layer on the TFT and covering the TFT, and an organiclight-emitting diode (OLED), the OLED including a pixel electrodeelectrically connected to the TFT, an emission layer on the pixelelectrode, and a counter electrode facing the counter electrode with theemission layer therebetween; a first dam in the peripheral area of thesubstrate to surround an outer periphery of the display; ametal-containing layer covering a top surface and a side surface of thefirst dam; and a thin-film encapsulator over the entire substrate tocover the display, the thin-film encapsulator including a firstinorganic film, a second inorganic film, and an organic film between thefirst inorganic film and the second inorganic film; and an inorganicmaterial layer on the first dam and directly between themetal-containing layer and the first inorganic film.

The organic light-emitting display apparatus may further include a lightenhancement layer between the counter electrode and the first inorganicfilm to correspond to the display area, wherein the inorganic materiallayer includes a same material as a material of the light enhancementlayer.

The light enhancement layer and the inorganic material layer may beintegrally formed with each other, the light enhancement layer may havea first thickness, and the inorganic material layer may have a secondthickness that is less than the first thickness.

The metal-containing layer may include a same material as a material ofthe pixel electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will be apparent to those of skill in the art by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a plan view of an organic light-emitting displayapparatus according to an embodiment;

FIG. 2 illustrates an equivalent circuit diagram of one pixel of theorganic light-emitting display apparatus of FIG. 1;

FIG. 3 illustrates a cross-sectional view taken along a line A-A′ ofFIG. 1;

FIG. 4 illustrates a cross-sectional view of an organic light-emittingdisplay apparatus according to another embodiment;

FIG. 5 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment;

FIG. 6 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment;

FIG. 7 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment; and

FIG. 8 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. It will also be understood thatwhen a layer or element is referred to as being “on” another layer orelement, it can be directly on the other layer or element, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being “under” another layer, it canbe directly under, and one or more intervening layers may also bepresent. In addition, it will also be understood that when a layer isreferred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent. For example, a layer that is directly between a first layer anda second layer directly contacts the first layer on one side thereof anddirectly contacts the second layer on another side thereof. Likereference numerals refer to like elements throughout.

It will be understood that although the terms “first”, “second”, etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These elements are only used todistinguish one element from another. As used herein, the singular forms“a”, “an”, and “the” are intended to include the plural forms as well,unless the context clearly indicates otherwise.

It will be further understood that the terms “includes,” “including,”“comprises” and/or “comprising” used herein specify the presence ofstated features or components, but do not preclude the presence oraddition of one or more other features or components. It will beunderstood that when a layer, region, or element is referred to as being“formed on”, another layer, region, or element, it can be directly orindirectly formed on the other layer, region, or element. For example,intervening layers, regions, or elements may be present.

Sizes of elements may be exaggerated for convenience of explanation. Inother words, since sizes and thicknesses of elements in the drawings arearbitrarily illustrated for convenience of explanation, the followingembodiments are not limited thereto.

In the following examples, the x-axis, the y-axis and the z-axis are notlimited to three axes of the rectangular coordinate system, and may beinterpreted in a broader sense. For example, the x-axis, the y-axis, andthe z-axis may be perpendicular to one another, or may representdifferent directions that are not perpendicular to one another.

When a certain embodiment may be implemented differently, a specificprocess order may be different from the described order. For example,two consecutively described processes may be performed substantially atthe same time or performed in an order opposite to the described order.

As used herein, the terms “or” and “and/or” includes any and allcombinations of one or more of the associated listed items. Expressionssuch as “at least one of” when preceding a list of elements, modify theentire list of elements and do not modify the individual elements of thelist.

FIG. 1 illustrates a plan view of an organic light-emitting displayapparatus 1 according to an embodiment. FIG. 2 illustrates an equivalentcircuit diagram of one pixel of the organic light-emitting displayapparatus 1 of FIG. 1.

Referring to FIG. 1, the organic light-emitting display apparatus 1 mayinclude a display unit or display 10 located on a substrate 100. Thedisplay 10 may include pixels P connected to scan lines SL that extendin a y-direction and data lines DL that extend in an x-directionintersecting the y-direction. The display 10 may provide a predeterminedimage by using light emitted from the pixels P, and defines a displayarea DA.

Each of the pixels P may emit, e.g., red, green, blue, or white light.Each pixel P may include a display device, and the display device mayinclude an organic light-emitting diode (OLED). The term ‘pixel P’ usedherein refers to a pixel that emits light of any one color among red,green, blue, and white.

Referring to FIG. 2, the pixel P may include a pixel circuit PCconnected to the scan line SL and the data line DL and the OLEDconnected to the pixel circuit PC. The pixel circuit PC may include adriving TFT Td, a switching TFT Ts, and a storage capacitor Cst. Theswitching TFT Ts may be connected to the scan line SL and the data lineDL, and may transmit a data signal input through the data line DL to thedriving TFT Td according to a scan signal input through the scan lineSL.

The storage capacitor Cst may be connected to the switching TFT Ts and adriving voltage line PL, and may store a voltages corresponding to adifference between a voltage applied from the switching TFT Ts and adriving voltage ELVDD supplied to the driving voltage line PL.

The driving TFT Td may be connected to the driving voltage line PL and astorage capacitor Cst, and may control driving current flowing throughthe OLED from the driving voltage line PL in response to the voltagestored in the storage capacitor Cst. The OLED may emit light having apredetermined luminance due to the driving current. The OLED may emit,e.g., red, green, blue, or white light.

In an implementation, the pixel P may include two TFTs and one storagecapacitor, as illustrated in FIG. 2. In an implementation, the pixelcircuit PC of the pixel P may include three or more TFTs, or two or morestorage capacitors.

Referring back to FIG. 1, a peripheral area PA may be located outsidethe display area DA. For example, the peripheral area PA may surroundthe display area DA. The peripheral area PA where the pixels P are notlocated may be a non-display area where an image is not provided.

In the peripheral area PA, a driving circuit (e.g., first and secondscan driving circuits 20 and 30), a pad unit or pad array 40, a drivingpower supply wiring 60, and a common power supply wiring 70 may belocated.

The first and second scan driving circuits 20 and 30 may be located inthe peripheral area PA of the substrate 100, and may generate andtransmit a scan signal to each pixel P through the scan line SL. In animplementation, the first scan driving circuit 20 may be located at theleft side of the display 10 and the second scan driving circuit 30 maybe located at the right side of the display 10. In an implementation,only one scan driving circuit may be provided.

The pad array 40 may be located on an end portion of the substrate 100,and may include a plurality of pads 41, 42, 44, and 45. The pad array 40may be exposed without being covered by an insulating layer, and may beelectrically connected to a flexible printed circuit board (FPCB). Thepad array 40 may be located on a side of the substrate 100 where thefirst and second scan driving circuits 20 and 30 are not located.

The FPCB may electrically connect a controller 55 and the pad array 40,and a signal or power transmitted from the controller 55 is appliedthrough connection wirings 21, 31, 51, 61, and 71 connected to the padarray 40.

The controller 55 may receive a vertical synchronization signal, ahorizontal synchronization signal, and a clock signal to generate acontrol signal for controlling driving of the first and second scandriving circuits 20 and 30, and may transmit the generated controlsignal to the first and second scan driving circuits 20 and 30 throughthe connection wirings 21 and 31 and the pad 44 connected to the FPCB,and a scan signal of the first and second scan driving circuits 20 and30 may be applied to each pixel P through the scan line SL. Thecontroller 55 supplies driving power ELVDD and common power ELVSS to thedriving power supply wiring 60 and the common power supply wiring 70through the connection wirings 61 and 71 and the pads 42 and 45connected to the FPCB. The driving power ELVDD may be supplied to eachpixel P through the driving voltage line PL, and the common power ELVSSmay be supplied to a common electrode of the pixel P.

A data driving circuit 50 may be located on the FPCB. The data drivingcircuit 50 applies a data signal to each pixel P. The data signal of thedata driving circuit 50 is applied to each pixel P through theconnection wiring 51 connected to the pad 41 and the data line DLconnected to the connection wiring 51. In an implementation, the datadriving circuit 50 may be located on the FPCB, as illustrated in FIG. 1.In an implementation, the data driving circuit 50 may be located in theperipheral area PA of the substrate 100.

The driving power supply wiring 60 may be located in the peripheral areaPA. For example, the driving power supply wiring 60 may be locatedbetween the pad array 40 and a side of the display 10 adjacent to thepad array 40. The driving power ELVDD supplied through the connectionwiring 61 connected to the pad 41 may be supplied to each pixel Pthrough the driving voltage line PL.

The common power supply wiring 70 may be located in the peripheral areaPA, and may partially surround the display 10. For example, the commonpower supply wiring 70 having a loop shape where the side of the display10 adjacent to the pad array 40 is opened may extend along an edge 100 eof the substrate 100 other than the pad array 40.

The common power supply wiring 70 of FIG. 1 may be electricallyconnected to the connection wiring 71 connected to the pad 45, andsupplies the common power ELVSS to a counter electrode 230 (e.g., acathode) of the OLED of the pixel P. In FIG. 1, the common power supplywiring 70 has a loop shape where a side of the common power supplywiring 70 partially surrounding the display 10 is opened, and partiallyoverlaps the connection wiring 71. The connection wiring 71 and thecommon power supply wiring 70 may be connected to each other through acontact hole CNT of an insulating layer, e.g., an inorganic insulatinglayer, located between the connection wiring 71 and the common powersupply wiring 70, and the contact hole CNT where the connection wiring71 and the common power supply wiring 70 contact each other may beadjacent to the side of the display 10 facing the pad array 40. In animplementation, the common power supply wiring 70 may be directlyconnected to the pad 45, without the connection wiring 71.

A thin-film encapsulation unit or thin-film encapsulator 80 for sealingthe display 10 from the outside may be further provided on the display10. The thin-film encapsulator 80 may have a multi-layer structure wherean inorganic film and an organic film 320 are alternately stacked. Thethin-film encapsulator 80 may extend to the edge 100 e of the substrate100 to cover the display 10 and circuits (e.g., the first and secondscan driving circuits 20 and 30 and the common power supply wiring 70)located in the peripheral area PA.

A dam portion or dam 90 may be located outside the common power supplywiring 70. In an implementation, the dam 90 may include a first darn 92and a second dam 94. The first dam 92 may be closer to the common powersupply wiring 70 than the second dam 94, and the second dam 94 maysurround an outer periphery of the first dam 92. The thin-filmencapsulator 80 may be provided to cover both the first darn 92 and thesecond dam 94.

FIG. 3 illustrates a cross-sectional view taken along line A-A′ ofFIG. 1. FIG. 4 illustrates a cross-sectional view of an organiclight-emitting display apparatus according to another embodiment.

FIG. 4 illustrates a cross-sectional view taken along line A-A′, like inFIG. 3, and there is a difference between FIG. 4 and FIG. 3 in astructure of an light enhancement layer 250. Except the difference, FIG.4 is the same as FIG. 3, and thus the following will focus on thedifference.

Referring to FIG. 3, the organic light-emitting display apparatus 1 mayinclude the display area DA and the peripheral area PA. The substrate100 may be formed of a suitable material, e.g., a glass material, ametal material, or a plastic material (e.g., polyethylene terephthalate(PET), polyethylene naphthalate (PEN), or polyimide).

Referring to the display area DA of FIG. 3, a display may be located inthe display area DA. The display may roughly include various layers,wirings, and devices located in the display area DA.

A buffer layer 120 may be located on the substrate 100. The buffer layer120 may help prevent foreign materials or moisture from penetratingthrough the substrate 100. For example, the buffer layer 120 may includean inorganic material such as silicon oxide (SiOx), silicon nitride(SiNx), or/and silicon oxynitride (SiON), and may have a single ormulti-layer structure.

A TFT 110 may include a semiconductor layer 112 and a gate electrode114. The semiconductor layer 112 may include, e.g., polysilicon. Thesemiconductor layer 112 may include a channel region overlapping thegate electrode 114, and a source region and a drain region located atboth sides of the channel region and including impurities at aconcentration higher than that of the channel region. The impurities mayinclude N-type impurities or P-type impurities. The source region andthe drain region may be electrically connected to a source electrode116s and/or a drain electrode 116 d of the TFT 110.

In an implementation, the semiconductor layer 112 may includepolysilicon. In an implementation, the semiconductor layer 112 mayinclude amorphous silicon, or may include an organic semiconductormaterial.

A gate insulating film 140 may be located between the semiconductorlayer 112 and the gate electrode 114. The gate insulating film 140 maybe an inorganic insulating layer formed of SiON, SiOx, and/or SiNx, andthe inorganic insulating layer may have a single or multi-layerstructure.

In an implementation, an interlayer insulating film 160 may be locatedbetween the gate electrode 114 and the source electrode 116s and/or thedrain electrode 116 d. The interlayer insulating film 160 may include,e.g., an organic insulating material or an inorganic insulatingmaterial. Examples of the organic insulating material may include animide-based polymer such as polyimide, a general-purpose polymer such aspolymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivativehaving a phenol-based group, an acryl-based polymer, an arylether-basedpolymer, an amide-based polymer, a fluorine-based polymer, ap-xylene-based polymer, a vinyl alcohol-based polymer, and a blendthereof. The inorganic insulating material may be SiON, SiOx, and/orSiNx. The interlayer insulating film 160 may have a single ormulti-layer structure.

An organic insulating layer 180 may be located on the TFT 110. Theorganic insulating layer 180 may help protect the TFT 110, and mayplanarize a top surface of the TFT 110. The organic insulating layer 180may include, e.g., an imide-based polymer, a general-purpose polymersuch as PMMA or PS, a polymer derivative having a phenol-based group, anacryl-based polymer, an arylether-based polymer, an amide-based polymer,a fluorine-based polymer, a p-xylene-based polymer, a vinylalcohol-based polymer, or a blend thereof.

An OLED 200 may be located on the organic insulating layer 180. The OLED200 may include a pixel electrode 210, the counter electrode 230, and anintermediate layer 220 located between the pixel electrode 210 and thecounter electrode 230.

A pixel-defining layer 240 may be located on the pixel electrode 210,and may define a pixel by having an opening corresponding to eachsub-pixel, e.g., an opening overlying or through which at least acentral portion of the pixel electrode 210 is exposed. Also, thepixel-defining layer 240 may help prevent an arc or the like fromoccurring between the pixel electrode 210 and the counter electrode 230by increasing a distance between an edge of the pixel electrode 210 andthe counter electrode 230. The pixel-defining layer 240 may be formed ofan organic material such as polyimide or hexamethyldisiloxane (HMDSO).

In an implementation, a spacer may be further located on thepixel-defining layer 240.

The pixel electrode 210 and the intermediate layer 220 may be(semi)transparent electrodes or reflective electrodes. When the pixelelectrode 210 and the intermediate layer 220 are (semi)transparentelectrodes, the pixel electrode 210 and the intermediate layer 220 maybe formed of, e.g., indium tin oxide (ITO), indium zinc oxide (IZO),zinc oxide (ZnO), In₂O₃, indium gallium oxide (IGO), or aluminum zincoxide (AZO). When the pixel electrode 210 and the intermediate layer 220are reflective electrodes, the pixel electrode 210 and the intermediatelayer 220 may include a reflective film formed of silver (Ag), magnesium(Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel(Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compoundthereof, and a layer formed of ITO, IZO, ZnO, In₂O₃, IGO, or AZO. In animplementation, and the pixel electrode 210 and the intermediate layer220 may be formed of suitable materials and may have a single ormulti-layer structure.

When the intermediate layer 220 includes a polymer material, theintermediate layer 220 may generally include a hole transport layer HTLand an emission layer EML. In an implementation, the hole transportlayer HTL may include poly(3,4-ethylenedioxythiophene) (PEDOT), and theemission layer EML may include a polymer material such as apoly-phenylenevinylene (PPV)-based material or a polyfluorene-basedmaterial. In an implementation, at least one of layers constituting theintermediate layer 220 may be integrally formed over a plurality of thepixel electrodes 210. In an implementation, the intermediate layer 220may include a layer patterned to correspond to each of the plurality ofpixel electrodes 210.

The counter electrode 230 may be located in the display area DA, and maybe located over the entire display area DA. For example, the counterelectrode 230 may be integrally formed or commonly formed to cover aplurality of pixels.

When the counter electrode 230 is a (semi)transparent electrode, thecounter electrode 230 may include a layer formed of a metal having a lowwork function, e.g., lithium (Li), calcium (Ca), LiF/Ca, LiF/Al, Al, Ag,Mg, or a compound thereof, and a (semi)transparent conductive layerformed of ITO, IZO, ZnO, or In₂O₃. When the counter electrode 230 is areflective electrode, the counter electrode 230 may include a layerformed of Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or a compound thereof.

A thin-film encapsulator 300 may be located on the counter electrode230. The thin-film encapsulator 300 of the present embodiment mayinclude a first inorganic film 310, a second inorganic film 330, and theorganic film 320 between the first inorganic film 310 and the secondinorganic film 330. The organic film 320 may be sealed by the firstinorganic film 310 and the second inorganic film 330, and may be locatedover the display area DA and a part of the peripheral area PA adjacentto the display area DA. In an implementation, the organic film 320 maybe located on the organic insulating layer 180.

The organic film 320 of the thin-film encapsulator 300 may include,e.g., an acrylic resin, a methacrylic resin, polyisoprene, a vinylresin, an epoxy resin, a urethane resin, a cellulose resin or a peryleneresin. For example, the organic film 320 may include butyl acrylate,ethylhexyl acrylate, propylene glycol methacrylate, tetrahydrofurfurylmethacrylate, vinyl acetate, N-vinylpyrrolidone, cycloaliphatic epoxide,epoxy acrylate, vinyl epoxy resin, urethane acrylate, or cellulosenitrate.

The first inorganic film 310 and the second inorganic film 330 of thethin-film encapsulator 300 may include, e.g., silicon nitride, aluminumnitride, zirconium nitride, titanium nitride, hafnium nitride, tantalumnitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide,cerium oxide, or silicon oxynitride (SiON).

The light enhancement layer 250 may be located between the counterelectrode 230 and the thin-film encapsulator 300. The light enhancementlayer 250 may be, e.g., a low refractive layer. The light enhancementlayer 250 may facilitate efficient emission of light generated by theOLED 200, and may help protect the OLED 200 from damage that may occurin a subsequent process using plasma or the like. The light enhancementlayer 250 may include, e.g., lithium fluoride (LiF). The lightenhancement layer 250 may be located in the display area DA.

In an implementation, the light enhancement layer 250 may be located onthe counter electrode 230, as shown in FIG. 3. In an implementation, thelight enhancement layer 250 may extend to a first dam 410, as shown inFIG. 4. In FIG. 3, the light enhancement layer 250 may be formed only onan open portion of a deposition mask. In an implementation, the lightenhancement layer 250 may extend to the first dam 410 as shown in FIG.4, and a part of the light enhancement layer 250 may be formed as a‘shadow film’ in a manufacturing process.

The light enhancement layer 250 may be formed through a depositionmethod using a mask. In this case, a residual film of the lightenhancement layer 250 may be formed on a portion other than an openportion of the mask, due to a gap between the mask and the substrate100. A part of the light enhancement layer 250 formed on the portionother than the open portion of the mask may be defined as a ‘shadowfilm’. The ‘shadow film’ may be formed when the gap between thesubstrate 100 and the mask is controlled by using a magnetic forcebetween the mask located over the substrate 100 and a cool plate locatedunder the substrate 100, and the formation of the ‘shadow film’ isinevitable during a process. The ‘shadow film’ may extend to the firstdam 410 as shown in FIG. 4. A ‘shadow film’ may be formed on a first damthat is physically very weak, and peeling could occur between the firstdam and the light enhancement layer whose adhesive strength to anorganic material is low.

The organic light-emitting display apparatus according to an embodimentmay include a metal-containing layer 212 between the light enhancementlayer 250 (having low adhesive strength) and the first dam 410 to helpincrease adhesive strength at the first dam 410, thereby effectivelyreducing peeling between the light enhancement layer 250 and the firstdam 410. For example, an adhesive strength between the first darn 410and the metal-containing layer 212 and adhesive strength between thelight enhancement layer 250 and the metal-containing layer 212 may begreater than an adhesive strength when the first dam 410 and the lightenhancement layer 250 directly contact each other. The metal-containinglayer 212 will be described in detail below.

Referring to the peripheral area PA of FIG. 3, a driving circuit DC, apower supply line 130, the first dam 410, and a second dam 420 may besequentially arranged from the display area DA. The driving circuit DCcorresponds to the first and second scan driving circuits 20 and 30 ofFIG. 1, and the power supply line 130 corresponds to the common powersupply wiring 70 of FIG. 1. The driving circuit DC and the power supplyline 130 may surround a part of the display, as shown in FIG. 1. Thepower supply line 130 may supply common power to the display by beingelectrically connected to the counter electrode 230 through themetal-containing layer 212.

Referring to an outermost peripheral area PA-E of FIG. 3, the first dam410 and the second dam 420 may be located outside the driving circuitDC. The first dam 410 and the second darn 420 may surround a peripheryof the display as shown in FIG. 1. The organic film 320 of the thin-filmencapsulator 300 may be prevented from overflowing through the first dam410 and the second dam 420.

The first darn 410 may include the same material as that of the organicinsulating layer 180. For example, the first dam 410 may include animide-based polymer, a general-purpose polymer such as PMMA or PS, apolymer derivative having a phenol-based group, an acryl-based polymer,an arylether-based polymer, an amide-based polymer, a fluorine-basedpolymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, of ablend thereof.

The metal-containing layer 212 may be located on the first dam 410. Themetal-containing layer 212 may be directly located on the first dam 410to directly contact and cover a top surface 410 a, an inner surface 410b, and an outer surface 410 c of the first dam 410. One end 212 a of themetal-containing layer 212 may be located on the organic insulatinglayer 180 to cover a terminal end of the organic insulating layer 180,and the other end 212 b of the metal-containing layer 212 may extend tothe second dam 420.

The metal-containing layer 212 may include the same material as that ofthe pixel electrode 210. For example, the metal-containing layer 212 maybe formed of ITO, IZO, ZnO, In₂O₃, IGO, or AZO. In an implementation,the metal-containing layer 212 may have a multi-layer structureincluding a layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or acompound thereof and a layer formed of ITO, IZO, ZnO, In₂O₃, IGO, orAZO.

The second dam 420 may have a multi-layer structure higher than that ofthe first dam 410. In an implementation, the second dam 420 may includea first layer 422, a second layer 424, and a third layer 426. The firstlayer 422 may include the same material as that of the organicinsulating layer 180, and the second layer 424 may include the samematerial as that of the pixel-defining layer 240. The third layer 426may include the same material as that of a spacer located over thepixel-defining layer 240.

In an implementation, the second dam 420 may include the first layer422, the second layer 424, and the third layer 426 as illustrated inFIG. 3. In an implementation, the second dam 420 may include only thefirst layer 422 and the second layer 424, without the third layer 426.

The first inorganic film 310 and the second inorganic film 330 of thethin-film encapsulator 300 may extend to the second dam 420. The firstinorganic film 310 and the second inorganic film 330 may cover the firstdam 410 and the second dam 420 and may extend to the edge 100 e of thesubstrate 100. The first inorganic film 310 and the second inorganicfilm 330 may extend to the edge 100 e of the substrate 100, and asealing force may be maximized.

Referring to FIG. 4, FIG. 4 is the same as FIG. 3 except a structure ofthe light enhancement layer 250 as described above. In FIG. 4, a part ofthe light enhancement layer 250 includes a ‘shadow film’. The followingwill be described on the assumption that the ‘shadow film’ is aninorganic material layer 252.

Referring to the peripheral area PA including the outermost peripheralarea PA-E of FIG. 4, the inorganic material layer 252 that is formed atan outer periphery of a mask pattern for forming the light enhancementlayer 250 during a manufacturing process may be understood as a portionformed when a part of a deposition material for forming the lightenhancement layer 250 spreads into a space between the mask and thesubstrate 100. Accordingly, the inorganic material layer 252 may beintegrally formed with (e.g., may continuously extend from) the lightenhancement layer 250, and may be understood as an end of the lightenhancement layer 250. Although the light enhancement layer 250 and theinorganic material layer 252 are not clearly distinguished, the lightenhancement layer 250 may have a function of improving a light emittingfunction of the display, and the light enhancement layer 250 may beunderstood as a portion located in the display area DA and the inorganicmaterial layer 252 may be understood as a portion located in theperipheral area PA.

The light enhancement layer 250 may have a first thickness, and theinorganic material layer 252 may have a second thickness. In animplementation, the first thickness of the light enhancement layer 250may be greater than the second thickness of the inorganic material layer252. As described above, the inorganic material layer 252 may be definedas a portion formed when a part of a deposition material for forming thelight enhancement layer 250 spreads into a space between the mask andthe substrate 100, and a thickness of the inorganic material layer 252may be less than a thickness of the light enhancement layer 250.

In an implementation, the inorganic material layer 252 may have athickness that gradually decreases toward a terminal end 252 e. Theterminal end 252 e of the inorganic material layer 252 may not have aside surface (e.g., may not have an upright or vertical side surface).For example, the inorganic material layer 252 may be formed so that athickness gradually decreases toward the terminal end 252 e and when theinorganic material layer 252 reaches a specific position, the inorganicmaterial layer 252 no longer exists (e.g., the thickness reduces to 0).The ‘specific position’ may be defined as a position where the first dam410 is covered under a current manufacturing process design.

The metal-containing layer 212, the inorganic material layer 252, andthe first inorganic film 310 and the second inorganic film 330 of thethin-film encapsulator 300 may be sequentially stacked on the first dam410. The metal-containing layer 212 may be directly located on the firstdam 410 to be in surface contact with a top surface, an inner surface,and an outer surface of the first dam 410. The inorganic material layer252 may be located on the metal-containing layer 212. As such, themetal-containing layer 212 may be directly between the first dam 410(including an organic material) and the inorganic material layer 252(including an inorganic material), and adhesive strength between thefirst dam 410 and the inorganic material layer 252 may be effectivelyimproved.

FIG. 5 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment. Thereis a difference between FIG. 5 and FIGS. 3 and 4 in a structure of theoutermost peripheral area PA-E.

Referring to FIG. 5, the buffer layer 120, the gate insulating film 140,and the interlayer insulating film 160 may extend to the outermostperipheral area PA-E. The first dam 410 and the second dam 420(including the first layer through the third layer 422, 424, and 426)may be located over the buffer layer 120, the gate insulating film 140,and the interlayer insulating film 160, and the first inorganic film 310and the second inorganic film 330 of the thin-film encapsulator 300 mayextend to the edge 100 e of the substrate 100 to cover the first darn410 and the second dam 420.

In the present embodiment, a first compensation layer 132 may be locatedunder the first dam 410. The first compensation layer 132 may be locatedon the same layer as the power supply line 130 of FIG. 4 and may includethe same material as that of the power supply line 130 of FIG. 4. Thefirst compensation layer 132 may be a part extending from the powersupply line 130, or may be a separate layer. The first compensationlayer 132 may be located under the first dam 410, and a height of thefirst dam 410 may be maintained.

The metal-containing layer 212 may be located on the first dam 410 andthe metal-containing layer 212 may help improve adhesive strengthbetween the first dam 410 and the inorganic material layer 252, and itmay not easy to additionally form a layer on the metal-containing layer212 formed of the same material as that of the pixel electrode 210.Accordingly, in order to compensate for a level difference of the firstdam 410, the first compensation layer 132 may be located under the firstdam 410 to maintain a height of the first dam 410.

In an implementation, as illustrated in FIG. 5, the first compensationlayer 132 may extend to the second dam 420, and a terminal end 130 e ofthe first compensation layer 132 is covered by the second dam 420. In animplementation, the first compensation layer 132 may have a suitablestructure that compensates for a level difference of the first dam 410.

FIG. 6 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment. Thereis a difference between FIG. 6 and FIGS. 3 and 4 in a structure of theoutermost peripheral area PA-E.

Referring to FIG. 6, the buffer layer 120, the gate insulating film 140,and the interlayer insulating film 160 may extend to the outermostperipheral area PA-E. The first dam 410 and the second dam 420(including the first through third layers 422, 424, and 426) may belocated over the buffer layer 120, the gate insulating film 140, and theinterlayer insulating film 160, and the first inorganic film 310 and thesecond inorganic film 330 of the thin-film encapsulator 300 may extendto the edge 100 e of the substrate 100 to cover the first dam 410 andthe second dam 420.

In the present embodiment, the first compensation layer 132 and a secondcompensation layer 134 may be located under the first darn 410. Thefirst compensation layer 132 may include the same material as that ofthe power supply line 130 of FIG. 3 or 4. The first compensation layer132 may be a part extending from the power supply line 130, or may be aseparate layer. The second compensation layer 134 may include the samematerial as that of the gate electrode 114 of the TFT 110 of FIG. 3 or4. The first compensation layer 132 and the second compensation layer134 may be located under the first dam 410, and a height of the firstdam 410 may be maintained.

FIG. 7 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment. Thereis a difference between FIG. 7 and FIGS. 3 and 4 in a structure of theoutermost peripheral area PA-E.

Referring to FIG. 7, the buffer layer 120, the gate insulating film 140,and the interlayer insulating film 160 may extend to the outermostperipheral area PA-E. The first dam 410 and the second dam 420 may belocated over the buffer layer 120, the gate insulating film 140, and theinterlayer insulating film 160, and the first inorganic film 310 and thesecond inorganic film 330 of the thin-film encapsulator 300 may extendto the edge 100 e of the substrate 100 to cover the first dam 410 andthe second darn 420.

In the present embodiment, the first darn 410 and the second darn 420may have the same height. When the first dam 410 and the second dam 420have the same height, it may mean that the second dam 420 includes onlythe first layer 422 of FIG. 6.

The metal-containing layer 212 may cover the first darn 410, and mayextend to the second dam 420 and may be located on the second darn 420.For example. the metal-containing layer 212 may cover a top surface 420a, an inner surface 420 b, and an outer surface 420 c of the second dam420.

The first compensation layer 132 may be located under the first dam 410and the second dam 420. The first compensation layer 132 may include thesame material as that of the power supply line 130 of FIG. 3 or 4. Thefirst compensation layer 132 may be a part extending from the powersupply line 130, or may be a separate layer. The first compensationlayer 132 may be located under the first dam 410 and the second dam 420,and a height of the first dam 410 and the second dam 4720 may bemaintained.

The terminal end 132 e of the first compensation layer 132 of FIG. 7 mayextend to the outside of the second dam 420, and the terminal end 132 eof the first compensation layer 132 may be covered by an insulating film430.

In an implementation, the second compensation layer 134 may be furtherlocated under the first dam 410 and the second dam 420 of FIG. 7, likein FIG. 6.

FIG. 8 illustrates a cross-sectional view of a part of an organiclight-emitting display apparatus according to another embodiment. Thereis a difference between FIG. 8 and FIG. 7 in that a third compensationlayer 136 is further located under the first dam 410 and the second dam420.

Referring to FIG. 8, the third compensation layer 136 may be furtherlocated under the first dam 410 and the second dam 420. The thirdcompensation layer 136 may be located under the first compensation layer132. The third compensation layer 136 may be an organic insulating filmincluding an organic material.

By way of summation and review, in some organic light-emitting displayapparatuses and methods of manufacturing the same, peeling could occurdue to adhesive strength between layers located at a peripheral portionof a display area, thereby reducing the quality of the organiclight-emitting display apparatuses.

As described above, according to the one or more embodiments, an organiclight-emitting display apparatus for displaying a high-quality image bypreventing peeling at a peripheral portion of a display area may berealized.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. An organic light-emitting display apparatus,comprising: a substrate that includes a display area and a peripheralarea around the display area; a thin-film transistor (TFT) in thedisplay area of the substrate; an organic insulating layer on the TFTand covering the TFT; an organic light-emitting diode (OLED) thatincludes a pixel electrode electrically connected to the TFT, anemission layer on the pixel electrode, and a counter electrode facingthe pixel electrode with the emission layer therebetween; apixel-defining layer on the organic insulating layer, the pixel-defininglayer having an opening overlying a central portion of the pixelelectrode; a first dam in the peripheral area of the substrate; a seconddam in the peripheral area of the substrate to surround an outerperiphery of the first dam; a metal-containing layer covering the firstdam, the metal-containing layer including a same material as a materialof the pixel electrode; and a thin-film encapsulator over the entiresubstrate to cover the OLED, the thin-film encapsulator including afirst inorganic film, a second inorganic film, and an organic filmbetween the first inorganic film and the second inorganic film.
 2. Theorganic light-emitting display apparatus as claimed in claim 1, whereinthe metal-containing layer directly contacts a top surface, an innersurface, and an outer surface of the first dam.
 3. The organiclight-emitting display apparatus as claimed in claim 1, wherein a firstend portion of the metal-containing layer covers a terminal end of theorganic insulating layer.
 4. The organic light-emitting displayapparatus as claimed in claim 1, wherein a second end portion of themetal-containing layer extends to the second dam.
 5. The organiclight-emitting display apparatus as claimed in claim 1, wherein thefirst inorganic film and the second inorganic film of the thin-filmencapsulator extend to an edge of the substrate and cover the seconddam.
 6. The organic light-emitting display apparatus as claimed in claim1, further comprising a light enhancement layer between the counterelectrode and the first inorganic film, the light enhancement layerincluding an inorganic material.
 7. The organic light-emitting displayapparatus as claimed in claim 6, wherein the light enhancement layerextends onto the first dam and covers the first dam.
 8. The organiclight-emitting display apparatus as claimed in claim 6, wherein thelight enhancement layer is directly between the metal-containing layerand the first inorganic film.
 9. The organic light-emitting displayapparatus as claimed in claim 1, further comprising a power supply linebetween the organic insulating layer and the first dam, wherein an endof the power supply line is covered by the organic insulating layer. 10.The organic light-emitting display apparatus as claimed in claim 9,wherein the metal-containing layer is between the organic insulatinglayer and the first dam and electrically contacts the power supply line.11. The organic light-emitting display apparatus as claimed in claim 9,further comprising a first compensation layer under the first dam, thefirst compensation layer including a metal.
 12. The organiclight-emitting display apparatus as claimed in claim 11, wherein: theTFT includes a semiconductor layer, a gate electrode at least partiallyoverlapping the semiconductor layer, and a source electrode and a drainelectrode electrically connected to the semiconductor layer, and thefirst compensation layer includes a same material as a material of thesource electrode and the drain electrode.
 13. The organic light-emittingdisplay apparatus as claimed in claim 11, further comprising a secondcompensation layer under the first compensation layer, the secondcompensation layer including a same material as a material of the gateelectrode.
 14. The organic light-emitting display apparatus as claimedin claim 11, further comprising a third compensation layer under thefirst compensation layer, the third compensation layer including anorganic material.
 15. The organic light-emitting display apparatus asclaimed in claim 1, wherein the first dam includes a same material as amaterial of the organic insulating layer.
 16. The organic light-emittingdisplay apparatus as claimed in claim 1, wherein the second damincludes: a first layer including a same material as a material of theorganic insulating layer, and a second layer including a same materialas a material of the pixel-defining layer.
 17. An organic light-emittingdisplay apparatus, comprising: a substrate that includes a display areaand a peripheral area around the display area; a display in the displayarea of the substrate, the display including a thin-film transistor(TFT), an organic insulating layer on the TFT and covering the TFT, andan organic light-emitting diode (OLED), the OLED including a pixelelectrode electrically connected to the TFT, an emission layer on thepixel electrode, and a counter electrode facing the counter electrodewith the emission layer therebetween; a first dam in the peripheral areaof the substrate to surround an outer periphery of the display; ametal-containing layer covering a top surface and a side surface of thefirst dam; and a thin-film encapsulator over the entire substrate tocover the display, the thin-film encapsulator including a firstinorganic film, a second inorganic film, and an organic film between thefirst inorganic film and the second inorganic film; and an inorganicmaterial layer on the first darn and directly between themetal-containing layer and the first inorganic film.
 18. The organiclight-emitting display apparatus as claimed in claim 17, furthercomprising a light enhancement layer between the counter electrode andthe first inorganic film to correspond to the display area, wherein theinorganic material layer includes a same material as a material of thelight enhancement layer.
 19. The organic light-emitting displayapparatus as claimed in claim 18, wherein: the light enhancement layerand the inorganic material layer are integrally formed with each other,the light enhancement layer has a first thickness, and the inorganicmaterial layer has a second thickness that is less than the firstthickness.
 20. The organic light-emitting display apparatus as claimedin claim 17, wherein the metal-containing layer includes a same materialas a material of the pixel electrode.